IRF7523D1TR【PDF 2/8 页】MOSFET N-CH 30V 2.7A MICRO8

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IRF7523D1

MOSFET Electrical Characteristics @ T J = 25°C (unless otherwise specified)

2

Parameter

Min.

Typ.

Max. Units Conditions

?

— R G = 6.1 ?

V (BR)DSS

R DS(on)

V GS(th)

g fs

I DSS

I GSS

Q g

Q gs

Q gd

t d(on)

t r

t d(off)

t f

C iss

C oss

C rss

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Forward Transconductance

Drain-to-Source Leakage Current

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

30

—

—

1.0

1.9

—

—

—

—

—

—

—

—

—

—

—

—

—

—

—

0.090

0.140

—

—

—

—

—

—

7.8

1.2

2.5

4.7

10

12

5.3

210

80

32

— V V GS = 0V, I D = 250μA

0.130 V GS = 10V, I D = 1.7A ?

0.190 V GS = 4.5V, I D = 0.85A ?

— V V DS = V GS , I D = 250μA

— S V DS = 10V, I D = 0.85A

1.0 V DS = 24V, V GS = 0V

μA

25 V DS = 24V, V GS = 0V, T J = 125°C

-100 V GS = -20V

nA

100 V GS = 20V

12 I D = 1.7A

1.8 nC V DS = 24V

3.8 V GS = 10V (see figure 6) ?

— V DD = 15V

— I D = 1.7A

ns

— R D = 8.7 ? ?

— V GS = 0V

— pF V DS = 25V

— ? = 1.0MHz (see figure 5)

MOSFET Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units

Conditions

I S

Continuous Source Current (Body Diode) — —

1.25 A

I SM

Pulsed Source Current (Body Diode) — — 21

V SD

t rr

Q rr

Body Diode Forward Voltage — — 1.2 V

Reverse Recovery Time (Body Diode) — 40 60 ns

Reverse Recovery Charge — 48 72 nC

T J = 25°C, I S = 1.7A, V GS = 0V

T J = 25°C, I F = 1.7A

di/dt = 100A/μs ?

Schottky Diode Maximum Ratings

Parameter

Max. Units.

Conditions

I F(av)

Max. Average Forward Current

1.9

A

50% Duty Cycle. Rectangular Wave, T A = 25°C

1.3

See Fig.14 T A = 70°C

I SM

Max. peak one cycle Non-repetitive

120

5μs sine or 3μs Rect. pulse Following any rated

A

Surge current

11 10ms sine or 6ms Rect. pulse load condition &

with V RRM applied

Schottky Diode Electrical Specifications

Parameter

Max. Units

Conditions

V FM

Max. Forward voltage drop

0.50

0.62

0.39

0.57

V

I F = 1.0A, T J = 25°C

I F = 2.0A, T J = 25°C

I F = 1.0A, T J = 125°C

I F = 2.0A, T J = 125°C .

I RM

Max. Reverse Leakage current

0.06

16

mA

V R = 30V T J = 25°C

T J = 125°C

C t

dv/dt

2

Max. Junction Capacitance

Max. Voltage Rate of Charge

92 pF

3600 V/ μs

V R = 5Vdc ( 100kHz to 1 MHz) 25°C

Rated V R

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